Shanghai zhong electronics and technology ltd. Welcomes you, and our division operates the infineon (english fly), semikron (simoncon), ixys (assess), sanreex (third society), fuji (fuss), siemens (simen), bussmann (basman), westcode (simar), tooshiba (tong chi), igbt (igbt) controlled silicon/cracker/smelter, etc., and a large number of live items are welcome for telephone counselling. I'll return the request. It's good
The purpose of the company's business, based on the concept of “guarantee, customer-first” business, is “good faith, reputation-based”. Convinced that clients will always be the source of corporate development, with a market-oriented approach and commitment to good after-sales services, we are actively involved in outreach and industry exchanges, that companies have developed good partnerships over the long term with the advantage of hard production and with many large companies in the country, and that we are eager to welcome our domestic and foreign clients to my department, to visit and exchange technology, and to work with our friends from all walks of life to build a good home
The insulation grid bipolar transistor (igbt) is a power transistor that combines the high-speed switches and voltage drive properties of the metallic oxide semiconductor transistor tube (mosfet) and the properties of the bipolar transistor tube (low saturation and voltage). As shown in figure 1, igbt's rationale symbol shows a bipolar transistor with a mos fence structure。
Igbt combines the advantages of mosfet and bipolar transistor tubes with low pressure control properties (mosfet) and high current-driven (bipolar transistors). It has lower switch losses and higher switch speeds and is suitable for high frequency applications. At the same time, the insulation performance and reliability were enhanced by the use of the insulation fence to isolate the fence and other components。
The igbt usually consists of a pn knot and a n ditch, with three ports: a collector, a transmitter and a fence. When the poles are applied to a positive voltage, a pnp-type structure is formed to polarize the pn between the condensation poles and the launch poles and thus to channel them. When the fence no longer exerts a positive voltage, the pnp knot returns to the open state and the igbt ceases to operate。
